N-buffer design and optimization in 4500V class IGBT
نویسندگان
چکیده
In this paper, the effects of doping structure multi-proton injection (MPI) buffer layer on static and short circuit characteristics IGBT were studied, relationship between donor concentration dose annealing temperature was studied. The MPI suitable for 4500V optimized by comparative experiments. This can solve problem high-temperature activation traditional lower thermal budget be fabricated large wafers better parameter consistency.
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ژورنال
عنوان ژورنال: Journal of physics
سال: 2022
ISSN: ['0022-3700', '1747-3721', '0368-3508', '1747-3713']
DOI: https://doi.org/10.1088/1742-6596/2370/1/012024